收藏本站
Trench TM
Power MOSFETs
IXTH110N25T
IXTV110N25TS
V DSS
I D25
R DS(on)
= 250V
= 110A
≤ 24m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXTH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
250
V
G
D
S
D (Tab)
V DGR
T J = 25 ° C to 150 ° C, R GS = 1M Ω
250
V
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
110
V
V
A
PLUS220SMD(IXTV_S)
I L(RMS)
I DM
I A
E AS
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
75
300
25
1
A
A
A
J
G
S
D (Tab)
P D
dv/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
694
10
W
V/ns
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
-55 to +150
+150
° C
° C
T stg
T L
T SOLD
M d
F C
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (to-247)
Mounting force (PLUS220SMD)
TO-247
PLUS220SMD
-55 to +150
300
260
1.13/10
11..65/2.5..14.6
6
4
° C
° C
° C
Nm/lb.in.
N/lb.
g
g
Features
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS = 0V, I D = 250 μ A
250
V
High Power Density
V GS(th)
V DS = V GS , I D = 1mA
3.0
5.0
V
I GSS
V GS = ± 20V, V DS = 0V
± 200
nA
Applications
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
5 μ A
250 μ A
24 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
? 2012 IXYS CORPORATION, All Rights Reserved
DS99904B(05/12)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTV18N60PS MOSFET N-CH 600V 18A PLUS220-SMD
IXTV200N10T MOSFET N-CH 100V 200A PLUS220
IXTV22N50PS MOSFET N-CH 500V 22A PLUS220-SMD
IXTV22N60PS MOSFET N-CH 600V 22A PLUS220-SMD
IXTV230N085TS MOSFET N-CH 85V 230A PLUS220SMD
IXTV250N075T MOSFET N-CH 75V 250A PLUS220
IXTV280N055TS MOSFET N-CH 55V 280A PLUS220SMD
IXTV36N50PS MOSFET N-CH 500V 36A PLUS220-SMD
相关代理商/技术参数
IXTV120N15T 功能描述:MOSFET 120 Amps 150V 14 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV130N15T 功能描述:MOSFET 130 Amps 150V 12 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV18N60P 功能描述:MOSFET 18.0 Amps 600 V 0.42 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV18N60PS 功能描述:MOSFET 18.0 Amps 600 V 0.42 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV200N10T 功能描述:MOSFET 200 Amps 100V 5.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV200N10TS 功能描述:MOSFET 200 Amps 100V 5.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV22N50P 功能描述:MOSFET 22.0 Amps 500 V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV22N50PS 功能描述:MOSFET 22.0 Amps 500 V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube